• DocumentCode
    892938
  • Title

    n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

  • Author

    Dier, O. ; Lauer, C. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • Volume
    42
  • Issue
    7
  • fYear
    2006
  • fDate
    3/30/2006 12:00:00 AM
  • Firstpage
    419
  • Lastpage
    420
  • Abstract
    An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10-6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
  • Keywords
    III-V semiconductors; contact resistance; gallium compounds; indium compounds; ohmic contacts; p-n heterojunctions; semiconductor doping; semiconductor-metal boundaries; silicon; InAsSb:Si-GaSb:Si; amphoteric dopant; device stability; extremely low resistivity; intra-device contacts; n-type doping; p-type doping; tunnel junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060341
  • Filename
    1618316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892938