DocumentCode :
892938
Title :
n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity
Author :
Dier, O. ; Lauer, C. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume :
42
Issue :
7
fYear :
2006
fDate :
3/30/2006 12:00:00 AM
Firstpage :
419
Lastpage :
420
Abstract :
An n-InAsSb/p-GaSb tunnel junction for intra-device contacts with an extremely low contact resistivity of 2.4×10-6 Ω cm2 is reported. Both sides of the junction were doped with silicon, using the amphoteric nature of the dopant for n- and p-type doping. This should provide long-term stability of the device.
Keywords :
III-V semiconductors; contact resistance; gallium compounds; indium compounds; ohmic contacts; p-n heterojunctions; semiconductor doping; semiconductor-metal boundaries; silicon; InAsSb:Si-GaSb:Si; amphoteric dopant; device stability; extremely low resistivity; intra-device contacts; n-type doping; p-type doping; tunnel junctions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060341
Filename :
1618316
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=892938
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