• DocumentCode
    893175
  • Title

    Fabrication and Characterization of Potassium Ion-Selective Electrode Based on Porous Silicon

  • Author

    Zhu, Ziqiang ; Zhang, Jian ; Zhu, Jianzhong ; Lu, Wei ; Zi, Jian

  • Author_Institution
    Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai
  • Volume
    7
  • Issue
    1
  • fYear
    2007
  • Firstpage
    38
  • Lastpage
    42
  • Abstract
    Porous-silicon (PS)-based potassium ion-selective microelectrode (K+ISME) was fabricated by using a microelectronic planar process and an electrochemical anodization etching technique. The apparent sensing area of the K+ISME is 100times100 mum 2. The response time t95% is 20 and 31 s when the concentration change is from low to high and vice versa, respectively. The potentials are constant at pH 2-8. The calibration curve for the K +ISME is linear within a wide range of pK=2.0~6.0. Its average slope during six months is 56.5 mV per decade, which is close to the Nernst response. The detection limit was found to be on the order of 5times10-7 M. The potentiometric selectivity coefficients (Ki,j pot) of the K+ ISE were 1.8 for NH 4 +, 3.6 for Li+, 4.1 for Na+, 4.5 for Mg2+, and 4.8 for Ca2+, respectively. Good performances of the K+ISME are attributed to large specific surface area and excellent adhesion between sensing membrane and the surface of PS
  • Keywords
    anodisation; chemical variables measurement; electrochemical sensors; elemental semiconductors; microelectrodes; porous semiconductors; potassium; silicon; sputter etching; K+ISME; Nernst response; calibration curve; electrochemical anodization etching; ion-selective electrode; microelectronic planar process; porous-silicon microelectrode; potassium ion-selective microelectrode; Adhesives; Biomembranes; Calibration; Delay; Electrodes; Etching; Fabrication; Microelectrodes; Microelectronics; Silicon; Ion-selective electrode; microelectrode; porous silicon (PS); potassium ion;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2006.888581
  • Filename
    4039331