DocumentCode
893204
Title
SNOS 1Kx8 static nonvolatile RAM
Author
Donaldson, Darrel D. ; Eby, Michael D. ; Fahrenbruck, Roy ; Honnigford, Edward H.
Volume
17
Issue
5
fYear
1982
Firstpage
847
Lastpage
851
Abstract
Using an advanced n-channel, double level polysilicon SNOS technology, a 1K/spl times/8 bit nonvolatile static RAM has been designed. Typical RAM access time is 300 ns, with typical active power dissipation of 300 mW, and standby power of 160 mW. Endurance of 10/SUP 4/ erase/store cycles has been demonstrated. The ability to measure erased and written memory thresholds allows prediction of retention lifetime. For the 8K NVRAM, the minimum retention lifetime is 1 year following a 10 ms erase and store.
Keywords
Field effect integrated circuits; field effect integrated circuits; Capacitors; EPROM; Manufacturing; Nonvolatile memory; Random access memory; Read-write memory; Resistors; Silicon; Temperature distribution; Testing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051829
Filename
1051829
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