Photoacoustic investigations of shallow acceptors in silicon by a piezoelectric transducer

Author

Ikari, Tetsuo ; Miyazaki, Kazuyuki ; Shigetomi, Shigeru ; Futagami, Koji

Author_Institution

Dept. of Electron., Miyazaki Univ., Japan

Volume

40

Issue

2

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

110

Lastpage

113

Abstract

Photoacoustic (PA) measurements of p-Si single crystals near an optical absorption edge were carried out by using PZT as a detector. A pronounced peak at 1.07 eV appears in addition to the plateau above 1.2 eV. A hole carrier concentration dependence and a compensation effect by thermally generated donors of the PA spectrum are investigated extensively. By considering these results, it is concluded that the observed peak is due to electron transitions involving boron acceptor impurities. Low temperature spectra down to 90 K also support this conclusion.<>

Keywords

elemental semiconductors; impurity electron states; photoacoustic spectra; silicon; visible spectra of inorganic solids; PZT; PbZrO3TiO3; Si; Si:B; acceptor impurities; compensation effect; electron transitions; hole carrier concentration dependence; low temperature spectra; optical absorption edge; p-type; photoacoustic spectra; piezoelectric transducer; shallow acceptors; thermally generated donors; Boron; Crystals; Electrons; Etching; Impurities; Optical sensors; Piezoelectric transducers; Silicon; Surface contamination; Temperature;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.212558

Filename

212558