Title :
Photoacoustic investigations of shallow acceptors in silicon by a piezoelectric transducer
Author :
Ikari, Tetsuo ; Miyazaki, Kazuyuki ; Shigetomi, Shigeru ; Futagami, Koji
Author_Institution :
Dept. of Electron., Miyazaki Univ., Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
Photoacoustic (PA) measurements of p-Si single crystals near an optical absorption edge were carried out by using PZT as a detector. A pronounced peak at 1.07 eV appears in addition to the plateau above 1.2 eV. A hole carrier concentration dependence and a compensation effect by thermally generated donors of the PA spectrum are investigated extensively. By considering these results, it is concluded that the observed peak is due to electron transitions involving boron acceptor impurities. Low temperature spectra down to 90 K also support this conclusion.<>
Keywords :
elemental semiconductors; impurity electron states; photoacoustic spectra; silicon; visible spectra of inorganic solids; PZT; PbZrO3TiO3; Si; Si:B; acceptor impurities; compensation effect; electron transitions; hole carrier concentration dependence; low temperature spectra; optical absorption edge; p-type; photoacoustic spectra; piezoelectric transducer; shallow acceptors; thermally generated donors; Boron; Crystals; Electrons; Etching; Impurities; Optical sensors; Piezoelectric transducers; Silicon; Surface contamination; Temperature;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
