DocumentCode :
893385
Title :
Computer models of the field-effect transistor
Author :
Roberts, Ben D., Jr. ; Harbourt, Cyrus O.
Author_Institution :
U. S. Army, Ft. Polk, La.
Volume :
55
Issue :
11
fYear :
1967
Firstpage :
1921
Lastpage :
1929
Abstract :
The use of general network analysis programs to analyze complex electronic circuits requires that valid models be developed for the active devices in these circuits. A nonlinear model of the field-effect transistor is presented for use in large-signal applications. From this model several piecewise-linear models suitable for use with an Electronic Circuit Analysis Program (ECAP) are derived. The approximations usable in these models are evaluated, and models intended for use in pulse inverters are presented. Techniques for measuring the parameters in the models are described and results of the measurement of these parameters for a sample of field-effect transistors are given. Finally, the behavior of actual pulse inverter circuits is shown to compare favorably with ECAP-Computed circuit performance.
Keywords :
Analytical models; Application software; Bipolar transistors; Circuit analysis; Conductors; Electronic circuits; FETs; Pulse inverters; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.6021
Filename :
1447951
Link To Document :
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