Small-signal MOSFET models for analog circuit design

Author

Liu, Sally ; Nagel, Laurence W.

Volume

17

Issue

6

fYear

1982

fDate

12/1/1982 12:00:00 AM

Firstpage

983

Lastpage

998

Abstract

Presents first-order large-signal MOSFET models and derives corresponding small-signal models. The parameters of the small-signal models are related to operating-point bias and to the parameters of the IC process used to fabricate the device. The impact upon small-signal performance of many second-order effects present in small-geometry MOSFETs is explored. A representative analog circuit, fabricated with a 1 μm feature-size NMOS technology, is analyzed using the small-signal models derived. Results of approximate analysis, without the use of computer aids, are compared with detailed computer simulation results.

Keywords

Circuit CAD; Digital simulation; Field effect integrated circuits; Insulated gate field effect transistors; Linear integrated circuits; Semiconductor device models; circuit CAD; digital simulation; field effect integrated circuits; insulated gate field effect transistors; linear integrated circuits; semiconductor device models; Analog circuits; Capacitance; Circuit synthesis; Frequency; Immune system; Integrated circuit modeling; Intrusion detection; MOSFET circuits; Transconductance; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1982.1051852

Filename

1051852