Title :
Small-signal MOSFET models for analog circuit design
Author :
Liu, Sally ; Nagel, Laurence W.
fDate :
12/1/1982 12:00:00 AM
Abstract :
Presents first-order large-signal MOSFET models and derives corresponding small-signal models. The parameters of the small-signal models are related to operating-point bias and to the parameters of the IC process used to fabricate the device. The impact upon small-signal performance of many second-order effects present in small-geometry MOSFETs is explored. A representative analog circuit, fabricated with a 1 μm feature-size NMOS technology, is analyzed using the small-signal models derived. Results of approximate analysis, without the use of computer aids, are compared with detailed computer simulation results.
Keywords :
Circuit CAD; Digital simulation; Field effect integrated circuits; Insulated gate field effect transistors; Linear integrated circuits; Semiconductor device models; circuit CAD; digital simulation; field effect integrated circuits; insulated gate field effect transistors; linear integrated circuits; semiconductor device models; Analog circuits; Capacitance; Circuit synthesis; Frequency; Immune system; Integrated circuit modeling; Intrusion detection; MOSFET circuits; Transconductance; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051852
