DocumentCode
893442
Title
A low-noise NMOS operational amplifier
Author
Senderowicz, Daniel ; Huggins, John H.
Volume
17
Issue
6
fYear
1982
Firstpage
999
Lastpage
1008
Abstract
NMOS operational amplifiers are known to have low-voltage gain and a poor noise performance. A new circuit technique is described which improves these parameters to achieve a typical DC voltage gain of 40000 and an average noise of 57 (nV/Hz/SUP 1/2/) over a 3 kHz bandwidth, with a total power dissipation of 6 mW.
Keywords
Electron device noise; Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; Preamplifiers; electron device noise; field effect integrated circuits; linear integrated circuits; operational amplifiers; preamplifiers; Bandwidth; CMOS technology; Circuit noise; Integrated circuit technology; Low-noise amplifiers; MOS devices; Operational amplifiers; Performance gain; Phase change materials; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051853
Filename
1051853
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