Title :
A low-noise NMOS operational amplifier
Author :
Senderowicz, Daniel ; Huggins, John H.
Abstract :
NMOS operational amplifiers are known to have low-voltage gain and a poor noise performance. A new circuit technique is described which improves these parameters to achieve a typical DC voltage gain of 40000 and an average noise of 57 (nV/Hz/SUP 1/2/) over a 3 kHz bandwidth, with a total power dissipation of 6 mW.
Keywords :
Electron device noise; Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; Preamplifiers; electron device noise; field effect integrated circuits; linear integrated circuits; operational amplifiers; preamplifiers; Bandwidth; CMOS technology; Circuit noise; Integrated circuit technology; Low-noise amplifiers; MOS devices; Operational amplifiers; Performance gain; Phase change materials; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051853
