Title :
A MOS switched-capacitor instrumentation amplifier
Author :
Yen, Robert C. ; Gray, Paul R.
Abstract :
Describes a precision switched-capacitor sampled-data instrumentation amplifier using NMOS polysilicon gate technology. It is intended for use as a sample-and-hold amplifier for low level signals in data acquisition systems. The use of double correlated sampling technique achieves high power supply rejection, low DC offset, and low 1/f noise voltage. Matched circuit components in a differential configuration minimize errors from switch channel charge injection. Very high common mode rejection (120 dB) is obtained by a new sampling technique which prevents the common mode signal from entering the amplifier. This amplifier achieves 1 mV typical input offset voltage, greater than 95 dB PSRR, 0.15 percent gain accuracy, 0.01 percent gain linearity, and an RMS input referred noise voltage of 30 /spl mu/V/input sample.
Keywords :
Electron device noise; Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; Sample and hold circuits; Switched capacitor networks; electron device noise; field effect integrated circuits; linear integrated circuits; operational amplifiers; sample and hold circuits; switched capacitor networks; Circuit noise; Data acquisition; Instruments; Linearity; MOS devices; Power supplies; Sampling methods; Switches; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051854