DocumentCode
893616
Title
Nonradiative surface recombination in electron-beam pumped GaAs lasers
Author
Lavine, J.M. ; Adams, A., Jr.
Volume
55
Issue
11
fYear
1967
Firstpage
2028
Lastpage
2029
Abstract
Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at voltages up to 30 kV, at both 4.2°K and 77°K.
Keywords
Gallium arsenide; Laser beams; Laser excitation; Laser transitions; Power measurement; Pump lasers; Spontaneous emission; Surface emitting lasers; Threshold voltage; Voltage measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.6046
Filename
1447976
Link To Document