Title :
12.5-gb/s direct Modulation up to 115°C in 1.3-μm InGaAlAs-MQW RWG DFB lasers with notch-free grating structure
Author :
Nakahara, Kouji ; Tsuchiya, Tomonobu ; Kitatani, Takeshi ; Shinoda, Kazunori ; Kikawa, T. ; Hamano, F. ; Fujisaki, S. ; Taniguchi, T. ; Nomoto, E. ; Sawada, M. ; Yuasa, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Direct modulation at 12.5 Gb/s of 1.3-μm InGaAlAs distributed feedback (DFB) ridge waveguide (RWG) lasers with low-resistance notch-free gratings running up to 115°C is experimentally demonstrated. It was achieved by the combination of the high differential gain of an InGaAlAs MQW active layer, high characteristic temperature of RWG structure, and low-resistance notch-free grating. Moreover, successful transmission of 10-Gb/s modulated signals over 30-km standard single-mode fiber was achieved with the laser running at up to 115°C. These results confirm the suitability of this type of laser for use as the cost-effective light source in 12.5-Gb/s and 10-Gb/s datacom applications.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 1.3-μm InGaAlAs distributed feedback ridge waveguide lasers; 1.3-μm InGaAlAs-MQW RWG DFB lasers; 10 Gbit/s; 10-Gb/s datacom application; 10-Gb/s modulated signals; 115 degC; 12.5 Gb/s datacom applications; 12.5 Gbit/s; 12.5-Gb/s direct modulation; 30 km; 30-km standard single-mode fiber; InGaAlAs; InGaAlAs MQW active layer; cost-effective light source; distributed feedback lasers; low-resistance notch-free grating structure; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Light sources; Optical waveguides; Quantum well devices; Semiconductor lasers; Temperature; Waveguide lasers;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.822157
