Design and fabrication of multiband p-i-n diode switches with ladder circuits

Author

Tanaka, Shingo ; Horiuchi, Satoru ; Kimura, Tsuneto ; Atsumi, Yasunori

Author_Institution

Radiowave Technol. & Syst. Res. Dept., Optowave Lab. Inc, Kanagawa, Japan

Volume

54

Issue

4

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1561

Lastpage

1568

Abstract

Single-pole double-throw switches composed of p-i-n diodes are proposed for multiband operations. A ladder resonance circuit is introduced to simplify their configuration and to reduce the cost. The isolation greater than 20 dB and the insertion loss less than 2 dB are achieved in experiments at three frequency bands: 1.6, 2.5, and 5.8 GHz. Resonance frequency variations are investigated in detail for two types of switches consisting of: 1) lumped circuit elements and 2) semimicrostrip elements. The variations on the semimicrostrip configuration are about 25% of those with lumped circuit elements. The proposed switch does not influence the switching speed and signal distortion characteristics. It also showed good temperature stability from -30°C to +85°C.

Keywords

circuit resonance; ladder networks; lumped parameter networks; microstrip components; microwave switches; p-i-n diodes; -30 to 85 C; 1.6 GHz; 2.5 GHz; 5.8 GHz; insertion loss; ladder circuits; ladder resonance circuit; lumped circuit elements; multiband switches; p-i-n diode switches; resonance frequency variations; semimicrostrip configuration; semimicrostrip elements; single-pole double-throw switches; temperature stability; Costs; Distortion; Fabrication; Insertion loss; P-i-n diodes; RLC circuits; Resonance; Resonant frequency; Switches; Switching circuits; Filters; ladder circuits; microwave switches; multifrequency antennas; p-i-n diodes; switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.871931

Filename

1618576