• DocumentCode
    893718
  • Title

    Temperature rise of transistor junctions due to two-dimensional current flow

  • Author

    Takagi, Kazuyoshi ; Mano, K.

  • Volume
    55
  • Issue
    11
  • fYear
    1967
  • Firstpage
    2040
  • Lastpage
    2041
  • Abstract
    The temperature rise of transistor junctions is analyzed by solving the two-dimensional thermal conduction equation. The result can be applied to determine the allowable current of the transistor, and it is shown that the allowable current is proportional to the minus one-quarter power of pulse duration at the high-current region.
  • Keywords
    Capacitance; Circuits; Current density; Impurities; Integral equations; Resistors; Temperature; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.6057
  • Filename
    1447987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=893718