Title :
Perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure
Author :
Liu, W.C. ; Sun, C.Y. ; Guo, D.-F. ; Liu, R.-C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
4/1/1993 12:00:00 AM
Abstract :
The perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure were studied at 300 and and 77 K. An interesting S-shaped negative differential resistance (NDR), resulting mainly from avalanche multiplications within the superlattice region, was observed at 300 K. A different multistate NDR phenomenon and an interesting hysteresis behaviour were found at 77 K. The multistate NDR is attributed to a sequential subavalanche multiplication process occurring within superlattice periods; holes created by avalanche multiplications play an important role in the transport properties. The hysteresis behaviour at 77 K seems to be caused by the heavily accumulated holes, which cannot react synchronously with the applied electric field
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; negative resistance; semiconductor superlattices; 300 K; 77 K; GaAs; S-shaped negative differential resistance; avalanche multiplications; heavily accumulated holes; hysteresis behaviour; multistate NDR phenomenon; perpendicular transport properties; sequential subavalanche multiplication process; superlattice region;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
