• DocumentCode
    893874
  • Title

    The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

  • Author

    Park, Yunseo ; Lee, Chang-Ho ; Cressler, John D. ; Laskar, Joy

  • Author_Institution
    Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    54
  • Issue
    4
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    1687
  • Lastpage
    1697
  • Abstract
    The design of ultra-wideband (UWB) low-noise amplifiers (LNAs) require additional circuit design principles, which differ from those used in conventional LNAs. The design of a low-dc-power-consumption SiGe HBT LNA covering the 2-10-GHz range is demonstrated for UWB applications. Important design factors that must be carefully considered for UWB applications are analyzed, which include power dissipation, operating bandwidth, noise figure, group delay variation, and linearity. The dominant factor for low group delay variation in UWB LNAs is identified through the theoretical analysis. The linearity behavior over the wide bandwidth is analyzed and explained using the Volterra series. Second-harmonic cancellation is determined to be the dominant degradation factor for linearity. The implemented SiGe LNA achieves a gain of 13 dB, a minimum noise figure of 3.3 dB, and an input third-order intercept point of -7.5 dBm between 2-10 GHz while consuming a dc power of only 9.6 mW. This SiGe UWB LNA exhibits less than 22 ps of uniform group delay variation over the entire band.
  • Keywords
    Ge-Si alloys; UHF amplifiers; Volterra series; bipolar transistor circuits; low noise amplifiers; low-power electronics; microwave amplifiers; network analysis; network synthesis; 13 dB; 2 to 10 GHz; 3.3 dB; 9.6 mW; HBT LNA; SiGe; Volterra series; circuit design; group delay variation; low dc power consumption; low noise amplifiers; noise figure; operating bandwidth; power dissipation; second harmonic cancellation; ultra wideband amplifier; Bandwidth; Circuit noise; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; Noise figure; Silicon germanium; Ultra wideband technology; Group delay variation; SiGe HBT; Volterra series; linearity; low-noise amplifier (LNA); noise figure; ultra-wideband (UWB);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2006.872000
  • Filename
    1618597