DocumentCode
893930
Title
Impact of Scaling on MOS Analog Performance
Author
Wong, Stephen ; Salama, C. Andre T
Volume
18
Issue
1
fYear
1983
fDate
2/1/1983 12:00:00 AM
Firstpage
106
Lastpage
114
Abstract
A first-order analysis of the impact of scaling on MOS analog performance under moderate scaling conditions is presented in this paper. Assuming a polysilicon gate ion-implanted MOS technology, quasi-constant voltage (QCV) scaling is shown to be the optimal scaling law, offering the best overall analog performance and resulting in an increase in functional density, gain-bandwidth product with a moderate degradation in gain, and signal-to-noise ratio. The first-order analysis agrees fairly well with computer simulation. A typical case study shows that under moderate scaling conditions, CMOS can generally offer a higher voltage gain when compared to depletion load NMOS and is the preferred technology for scaled analog implementations.
Keywords
MOS analog integrated circuits; Semiconductor devices; Very-large-scale integration; Analog circuits; CMOS technology; Degradation; Digital circuits; Doping; Integrated circuit technology; Performance analysis; Performance gain; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1983.1051906
Filename
1051906
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