• DocumentCode
    893930
  • Title

    Impact of Scaling on MOS Analog Performance

  • Author

    Wong, Stephen ; Salama, C. Andre T

  • Volume
    18
  • Issue
    1
  • fYear
    1983
  • fDate
    2/1/1983 12:00:00 AM
  • Firstpage
    106
  • Lastpage
    114
  • Abstract
    A first-order analysis of the impact of scaling on MOS analog performance under moderate scaling conditions is presented in this paper. Assuming a polysilicon gate ion-implanted MOS technology, quasi-constant voltage (QCV) scaling is shown to be the optimal scaling law, offering the best overall analog performance and resulting in an increase in functional density, gain-bandwidth product with a moderate degradation in gain, and signal-to-noise ratio. The first-order analysis agrees fairly well with computer simulation. A typical case study shows that under moderate scaling conditions, CMOS can generally offer a higher voltage gain when compared to depletion load NMOS and is the preferred technology for scaled analog implementations.
  • Keywords
    MOS analog integrated circuits; Semiconductor devices; Very-large-scale integration; Analog circuits; CMOS technology; Degradation; Digital circuits; Doping; Integrated circuit technology; Performance analysis; Performance gain; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1051906
  • Filename
    1051906