DocumentCode
893952
Title
Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique
Author
Beauvais, J. ; Ayling, S.G. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
5
Issue
4
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
372
Lastpage
373
Abstract
Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are described. Losses as low as 17 dBcm/sup -1/ were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; masks; optical losses; optical workshop techniques; semiconductor lasers; 2 mm; GaAs-AlGaAs; SiO/sub 2/; SrF/sub 2/; dielectric cap disordering; lasing action; low-loss extended cavity lasers; masking technique; optical losses; passive slab waveguide sections; quantum-well material; selective area masking; semiconductor laser diodes; silica cap disordering; Dielectric loss measurement; Dielectric materials; Dielectric measurements; Gallium arsenide; Loss measurement; Optical materials; Quantum well lasers; Silicon compounds; Strontium; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.212668
Filename
212668
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