Title :
NMOS dense gate matrix VLSI design
Author :
Schmidt, Kurt H. ; Mueller-Glaser, Klaus D.
fDate :
4/1/1983 12:00:00 AM
Abstract :
New optimized rules for a fast dense gate matrix layout in single-metal polysilicon-gate depletion-load NMOS technology are presented and applied to a cell design suitable for a VLSI custom cell library.
Keywords :
Circuit layout CAD; Field effect integrated circuits; Integrated logic circuits; Large scale integration; circuit layout CAD; field effect integrated circuits; integrated logic circuits; large scale integration; CMOS technology; Capacitance; Engineering drawings; Integrated circuit interconnections; Inverters; Libraries; MOS devices; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051916
