• DocumentCode
    894002
  • Title

    NMOS dense gate matrix VLSI design

  • Author

    Schmidt, Kurt H. ; Mueller-Glaser, Klaus D.

  • Volume
    18
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    157
  • Lastpage
    159
  • Abstract
    New optimized rules for a fast dense gate matrix layout in single-metal polysilicon-gate depletion-load NMOS technology are presented and applied to a cell design suitable for a VLSI custom cell library.
  • Keywords
    Circuit layout CAD; Field effect integrated circuits; Integrated logic circuits; Large scale integration; circuit layout CAD; field effect integrated circuits; integrated logic circuits; large scale integration; CMOS technology; Capacitance; Engineering drawings; Integrated circuit interconnections; Inverters; Libraries; MOS devices; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1051916
  • Filename
    1051916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894002