Title :
Analysis on FM efficiency of InGaAs/InGaAsP SCH-MQW LD´s taking injection carrier transport into account
Author :
Yamazaki, H. ; Yamaguchi, M. ; Kitamura, M. ; Mito, I.
Author_Institution :
NEC Corp., Tsukuba, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
FM efficiencies of InGaAs/InGaAsP separate-confinement-heterostructure multiple-quantum-well laser diodes (SCH-MQW LDs) were theoretically analyzed taking carrier transport in the SCH layer into account. It was found that injection carrier transport from the SCH layers to the wells plays an important role in the FM response, due to a finite carrier capture time. The calculated values for FM efficiency were in excellent agreement with measured values for LDs with different SCH layer thicknesses, which indicates that a thick SCH layer is desirable for high FM efficiency operation.<>
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; FM efficiency; FM response; InGaAs-InGaAsP; SCH-MQW LD´s; finite carrier capture time; injection carrier transport; laser diodes; layer thicknesses; multiple-quantum-well; semiconductors; separate-confinement-heterostructure; Carrier confinement; Diode lasers; Distributed feedback devices; Frequency modulation; Frequency shift keying; Indium gallium arsenide; Optical distortion; Photonics; Quantum well devices; Thickness measurement;
Journal_Title :
Photonics Technology Letters, IEEE
