Title :
A PISO JCCD filter with high-speed linear charge injection
Author :
Wolsheimer, Evert A.
fDate :
4/1/1983 12:00:00 AM
Abstract :
In junction charge-coupled devices (JCCDs), the unique possibility exists for charge injection through the gates. The process used for fabricating JCCDs also allows bipolar transistors and n-channel JFETs to be constructed. These features have been used to realize very linear charge-injection and charge-detection structures. By combining these structures, a parallel-in serial-out transversal JCCD filter has been realized. The filter is characterized by a high sampling rate and a low harmonic distortion.
Keywords :
Charge-coupled device circuits; Filters; Integrated circuit technology; charge-coupled device circuits; filters; integrated circuit technology; Charge coupled devices; Nonlinear filters; Power amplifiers; Power transistors; Radio frequency; Radiofrequency amplifiers; Sampling methods; Solid state circuits; Transversal filters; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1983.1051921
