Title :
High-gain, high-power 1.3 mu m compressive strained MQW optical amplifier
Author :
Suzuki, Yasuhiro ; Magari, Katsuaki ; Ueki, Mineo ; Amano, Toshimasa ; Mikami, Osamu ; Yamamoto, Mitsuo
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
A high-gain and high-saturation output power optical amplifier operating in the 1.3- mu m wavelength region that was fabricated using a compressive-strained multiple-quantum-well active region is described. It is shown that optical gain as high as 27 dB and 3-dB saturation output power as high as 14 dBm were obtained simultaneously.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical saturation; semiconductor lasers; 1.3 micron; 27 dB; IR; InGaAsP; MQW optical amplifier; compressive strained; high gain; high-power; high-saturation output power; multiple-quantum-well active region; optical gain; semiconductor laser diode fabrication; High power amplifiers; Optical amplifiers; Optical devices; Optical films; Optical saturation; Power amplifiers; Power generation; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
