1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain

Author

Newkirk, M.A. ; Miller, B.I. ; Koren, U. ; Young, M.G. ; Chien, M. ; Jopson, R.M. ; Burrus, C.A.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

406

Lastpage

408

Abstract

A multiquantum-well optical amplifier for 1.5- mu m wavelength operation using alternating tensile and compressively strained wells in the active region is described. For each bias level measured, the polarization sensitivity of the amplifier gain is 1 dB or less averaged over the gain bandwidth. This amplifier is suitable for integration with other optical devices in photonic integrated circuits which require polarization-independent gain.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; sensitivity; 1 dB; 1.5 micron; IR; InGaAs-InGaAsP; active region; amplifier gain; bias level; compressively strained wells; gain bandwidth; multiquantum-well semiconductor optical amplifier; optical devices; photonic integrated circuits; polarization sensitivity; polarization-independent gain; tensile strained wells; Bandwidth; Gain measurement; Integrated circuit measurements; Operational amplifiers; Optical amplifiers; Optical polarization; Optical sensors; Semiconductor optical amplifiers; Stimulated emission; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212680

Filename

212680