DocumentCode :
894102
Title :
Frequency modulation of Gunn oscillator by low magnetic flux
Author :
Ishii, T. Koryu
Volume :
18
Issue :
2
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
224
Lastpage :
227
Abstract :
It was found that when a low magnetic flux density was applied transversely to a commercial Gunn oscillator under rated bias voltage deep beyond the threshold, the oscillation frequency was modulated. This phenomenon was theoretically explained by employing new concepts of simplified magnetodynamic effect, successive collision effects, and successive collisions with a variable number of collisions.
Keywords :
Frequency modulation; Gunn oscillators; frequency modulation; CMOS memory circuits; Diodes; Frequency modulation; Gunn devices; Magnetic fields; Magnetic flux; Oscillators; Random access memory; Solid state circuits; Threshold voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1983.1051927
Filename :
1051927
Link To Document :
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