DocumentCode
894102
Title
Frequency modulation of Gunn oscillator by low magnetic flux
Author
Ishii, T. Koryu
Volume
18
Issue
2
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
224
Lastpage
227
Abstract
It was found that when a low magnetic flux density was applied transversely to a commercial Gunn oscillator under rated bias voltage deep beyond the threshold, the oscillation frequency was modulated. This phenomenon was theoretically explained by employing new concepts of simplified magnetodynamic effect, successive collision effects, and successive collisions with a variable number of collisions.
Keywords
Frequency modulation; Gunn oscillators; frequency modulation; CMOS memory circuits; Diodes; Frequency modulation; Gunn devices; Magnetic fields; Magnetic flux; Oscillators; Random access memory; Solid state circuits; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1983.1051927
Filename
1051927
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