Title :
Optical channel waveguides in AlGaAs multiple-quantum-well structures formed by focused ion-beam-induced compositional mixing
Author :
Kumar, Mukesh ; Gupta, Vandana ; DeBrabander, Gregory N. ; Chen, Peter ; Boyd, Joseph T. ; Steckl, Andrew J. ; Choo, Ahn Goo ; Jackson, Howard E. ; Burnham, Robert D. ; Smith, Stephen C.
Author_Institution :
Cincinnati Univ., OH, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Optical channel waveguiding in a AlGaAs multiple-quantum-well structure was demonstrated in a channel formed by compositional mixing induced by focused ion beam (FIB) implantation. Selective mixing was achieved by FIB implanting Si/sup ++/ with a dose of 5*10/sup 14/ cm/sup -2/ followed by rapid thermal annealing at 950 degrees C for 10 s. Raman microprobe spectra were used to characterize the lateral variation of compositional mixing. Channel waveguide loss of 17.2 dB/cm was measured, compared to 10-12 dB/cm measured for planar waveguiding. Mode field pattern measurements indicate that a change in effective index of 2.7*10/sup -4/ was induced, corresponding to an approximate mixing depth of 270 nm.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; ion implantation; optical losses; optical waveguides; semiconductor quantum wells; 10 s; 17.2 dB; 270 mm; 950 degC; AlGaAs; MQW; Raman microprobe spectra; Si/sup ++/; approximate mixing depth; channel waveguides; effective index; focused ion-beam-induced compositional mixing; mode field pattern measurements; multiple-quantum-well structures; optical channel waveguiding; optical workshop techniques; rapid thermal annealing; refractive index; selective mixing; semiconductors; waveguide loss; Ion beams; Loss measurement; Nonlinear optics; Optical mixing; Optical modulation; Optical waveguides; Particle beam optics; Planar waveguides; Quantum well devices; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
