Theoretical analysis of valence subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wells

Author

Kamiyama, Satoshi ; Uenoyama, Takeshi ; Mannoh, Masaya ; Ban, Yuzaburoh ; Ohnaka, Kiyoshi

Author_Institution

Matsushita Electric Ind. Co. Ltd., Osaka, Japan

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

439

Lastpage

441

Abstract

The valence subband structures and optical gain of GaInP/AlGaInP strained quantum wells are theoretically analyzed, using the 4*4 Luttinger-Kohn Hamiltonian. The compressive strain reduces the density of states near the valence band edge. As a result, the differential gain is enhanced for low injection carrier density, and the threshold current is reduced due to the reduction of radiative recombination current. For high injection current, the strain reduces the differential gain, although the threshold current is reduced due to the reduction of the hetero-barrier leakage current.<>

Keywords

III-V semiconductors; aluminium compounds; carrier density; electronic density of states; gallium compounds; indium compounds; laser theory; semiconductor lasers; semiconductor quantum wells; valence bands; 4*4 Luttinger-Kohn Hamiltonian; GaInP-AlGaInP; GaInP/AlGaInP compressive strained-quantum wells; density of states; differential gain; hetero-barrier leakage current; high injection current; laser diodes; low injection carrier density; optical gain; radiative recombination current; threshold current; valence band edge; valence subband structures; Capacitive sensors; Charge carrier density; Diodes; Effective mass; Indium gallium arsenide; Indium phosphide; Leakage current; Photonic band gap; Radiative recombination; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212692

Filename

212692