DocumentCode
894235
Title
The effects of an applied magnetic field on the oscillation of a silicon avalanche diode
Author
Durney, C.H.
Volume
55
Issue
12
fYear
1967
Firstpage
2170
Lastpage
2171
Abstract
The observed effects of an applied magnetic dc field on the oscillation of a p-i-n CW silicon avalanche diode oscillating near 11 GHz at room temperature are described. Near oscillation threshold, the applied magnetic field increases the RF power output significantly and the frequency of oscillation slightly, but has little effect at higher output levels.
Keywords
Diodes; Magnetic field measurement; Magnetic fields; Magnetic resonance; Magnetic separation; Power generation; Resistors; Silicon; Temperature; Waveguide transitions;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.6105
Filename
1448035
Link To Document