Title :
A simple method for preparing "Sodium-free" thermally grown silicon dioxide on silicon
Author :
Cohen, Reuven ; Simonne, J.
Abstract :
A simple, reproducible MOS process requiring few steps and no elaborate equipment was developed. A surface charge density of 1 × 1011/cm2was obtained for 1000-Å thermal oxide on 〈100〉 10-ohm ċ cm p-type silicon chips after mounting and bonding. Stability results after temperature-bias test (3 min at 300°C with a field of 106V/cm) exhibited a flatband voltage shift of only -0.50 V.
Keywords :
Bonding; Charge carrier processes; Diodes; Doping; Electron devices; Electron mobility; Silicon compounds; Thermal stability; Thermal stresses; Velocity measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.6124
