• DocumentCode
    894468
  • Title

    An effect of the subthreshold current on scaled-down MOS dynamic RAMs

  • Author

    Mashiko, Koichiro ; Yamada, Michihiro ; Nagayama, Yasuji ; Yoshihara, Tsutomu ; Nakano, Takao

  • Volume
    18
  • Issue
    4
  • fYear
    1983
  • Firstpage
    429
  • Lastpage
    431
  • Abstract
    Data-output holding characteristics of MOS dynamic RAMs with 2.5 /spl mu/m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.
  • Keywords
    Field effect integrated circuits; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated memory circuits; random-access storage; Circuit testing; Critical current; DRAM chips; Josephson effect; Josephson junctions; Subthreshold current; Superconductivity; Tunneling; Vehicle dynamics; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1051969
  • Filename
    1051969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894468