Title :
Characteristics of planar transistors under localized compressive stresses
Abstract :
Modes of variation of current gain in planar transistors stressed locally on the emitter are described by simple mathematics. Stress effects upon both the band gap and the carrier recombination time are taken into account.
Keywords :
Automatic control; Compressive stress; Control systems; Controllability; Kalman filters; Linear systems; Mathematics; Silicon; Transmission line matrix methods; Vectors;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6158
