Title :
Turn-on delay time of MOS transistors
Author :
Peters, David W.
Author_Institution :
Union Carbide Corp., Mountain View, Calif.
Abstract :
Expressions are derived which relate turn-on delay time of MOS transistors to device parameters and input gate voltage. Calculated delay times are compared to experimental delay times with reasonable agreement.
Keywords :
Delay effects; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Threshold voltage; Transient analysis;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6159
