DocumentCode
894734
Title
Turn-on delay time of MOS transistors
Author
Peters, David W.
Author_Institution
Union Carbide Corp., Mountain View, Calif.
Volume
56
Issue
1
fYear
1968
Firstpage
89
Lastpage
90
Abstract
Expressions are derived which relate turn-on delay time of MOS transistors to device parameters and input gate voltage. Calculated delay times are compared to experimental delay times with reasonable agreement.
Keywords
Delay effects; Equations; Equivalent circuits; Insulation; MOSFETs; Parasitic capacitance; Switching circuits; Threshold voltage; Transient analysis;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6159
Filename
1448089
Link To Document