• DocumentCode
    894836
  • Title

    A fast 16K static RAM built with a silicide enhanced NMOS process

  • Author

    Frederick, Bruce A.

  • Volume
    18
  • Issue
    5
  • fYear
    1983
  • Firstpage
    612
  • Lastpage
    614
  • Abstract
    A 25-ns 16K RAM is described which uses internal asynchronous precharging, a unique column buffer, and latching data lines. The NMOS technology features are 1.3 /spl mu/ L/SUB eff/, molybdenum silicide interconnect, and laser redundancy for yield enhancement.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Molybdenum compounds; Random-access storage; Redundancy; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; molybdenum compounds; random-access storage; redundancy; Breakdown voltage; CMOS technology; Decoding; Energy consumption; Fuses; Impedance; Integrated circuit interconnections; MOS devices; Silicides; Space technology;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1983.1052003
  • Filename
    1052003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894836