Title :
Observation of lithium drifted silicon detectors using SEM
Author :
Watanabe, E. ; Taira, M. ; Kuwata, M. ; Ikeda, T. ; Husimi, K. ; Miyachi, T. ; Ohkawa, S.
Author_Institution :
JEOL Ltd., Tokyo, Japan
Abstract :
Sectional surfaces of the lithium-drifted silicon detector are observed using the scanning electron microscope (SEM). Cyclic striation lines are observed in the lithium-drifted region of a detector made from a large-diameter silicon ingot. This is confirmed to be due to a cyclic fluctuation of donor impurity caused by a cyclic change of temperature during floating-zone processing. These materials are judged to be unsuitable for detector application.<>
Keywords :
lithium; scanning electron microscope examination of materials; semiconductor counters; silicon; Si(Li); Si:Li; cyclic fluctuation; donor impurity; floating-zone processing; scanning electron microscope; striation lines; Cathodes; Charge carrier processes; Crystalline materials; Crystals; Detectors; Fluctuations; Impurities; Lithium; Scanning electron microscopy; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
