• DocumentCode
    894864
  • Title

    Observation of lithium drifted silicon detectors using SEM

  • Author

    Watanabe, E. ; Taira, M. ; Kuwata, M. ; Ikeda, T. ; Husimi, K. ; Miyachi, T. ; Ohkawa, S.

  • Author_Institution
    JEOL Ltd., Tokyo, Japan
  • Volume
    35
  • Issue
    1
  • fYear
    1988
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    Sectional surfaces of the lithium-drifted silicon detector are observed using the scanning electron microscope (SEM). Cyclic striation lines are observed in the lithium-drifted region of a detector made from a large-diameter silicon ingot. This is confirmed to be due to a cyclic fluctuation of donor impurity caused by a cyclic change of temperature during floating-zone processing. These materials are judged to be unsuitable for detector application.<>
  • Keywords
    lithium; scanning electron microscope examination of materials; semiconductor counters; silicon; Si(Li); Si:Li; cyclic fluctuation; donor impurity; floating-zone processing; scanning electron microscope; striation lines; Cathodes; Charge carrier processes; Crystalline materials; Crystals; Detectors; Fluctuations; Impurities; Lithium; Scanning electron microscopy; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.12668
  • Filename
    12668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=894864