DocumentCode
894880
Title
An improved avalanche-injection transistor
Author
May, G.A.
Volume
56
Issue
1
fYear
1968
Firstpage
105
Lastpage
106
Abstract
An avalanche-injection transistor with a geometry similar to that of a surface channel FET was fabricated. The principle of operation, performance, and some fabrication details are briefly described.
Keywords
Alloying; Current measurement; FETs; Fabrication; Gain measurement; Geometry; Impact ionization; Reproducibility of results; Slabs; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6175
Filename
1448105
Link To Document