DocumentCode
894916
Title
Observation of multiple high-field domains in n-GaAs
Author
Thim, H.W. ; Barber, M.R.
Volume
56
Issue
1
fYear
1968
Firstpage
110
Lastpage
111
Abstract
Multiple high-field domains have been observed in n-GaAs using a resistive point-contact probe having a 2-micron spatial resolution and a 5-GHz frequency response. The probe is easy to construct, is compact and maneuverable, and can be used for identifying oscillatory modes when n-GaAs or other bulk semiconductors are embedded in coaxial or waveguide microwave circuits.
Keywords
Cathodes; Copper; Electron mobility; Gallium arsenide; Probes; Resistors; Semiconductor device doping; Strips; Transmission line theory; Voltage measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6179
Filename
1448109
Link To Document