Title :
A High-Resolution Method for Quantum Confinement Transport Simulations in MOSFETs
Author_Institution :
Cybermedia Center, Osaka Univ.
Abstract :
This paper describes a new discretization scheme for quantum confinement transport simulations using a quantum drift-diffusion model. A high-resolution scheme is constructed by developing an exponential-fitting method with the slope limiter in a class of conservative schemes to simulate the flow of electrons with quantum confinement effects in MOSFETs. This method is reinterpreted as a flux-limiter method that hybridizes a low-order flux and a high-order flux into a single numerical flux. The discretization method provides good approximations to the density profile in the smooth regions and boundary layers of the electron flow and allows high-resolution simulations of quantum confinement transport in ultrasmall MOSFETs
Keywords :
MOSFET; numerical analysis; partial differential equations; semiconductor device models; MOSFET; electron flow; exponential-fitting method; high-order flux; high-resolution method; high-resolution scheme; low-order flux; numerical analysis; partial differential equation; quantum confinement effects; quantum drift-diffusion model; quantum theory; semiconductor device model; Charge carrier processes; Chemicals; Computational modeling; Electrons; MOSFETs; Nonlinear equations; Partial differential equations; Poisson equations; Potential well; Schrodinger equation; Numerical analysis; partial differential equation; quantum theory; semiconductor device model; simulation;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2006.882531
