GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates

Author

Goossen, K.W. ; Boyd, G.D. ; Cunningham, J.E. ; Jan, W.Y. ; Miller, D.A.B. ; Chemla, D.S. ; Lum, R.M.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

1

Issue

10

fYear

1989

Firstpage

304

Lastpage

306

Abstract

Measurements of GaAs-AlGaAs multiple-quantum-well (MQW) reflection modulators grown simultaneously on GaAs and silicon substrates are presented. Comparable electroabsorption is observed, with contrast ratios of about 4:1 for both modulators at 20 V. The absorption spectrum of the GaAs-on-Si quantum well shows a single exciton peak, which leads to certain improvements in modulator performance. This study is very encouraging for the growth of GaAs MQW modulators on silicon integrated circuit chips for off-chip communication.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optoelectronics; optical modulation; semiconductor growth; semiconductor quantum wells; GaAs substrates; GaAs-AlGaAs multiquantum well reflection modulators; III-V semiconductors; Si substrates; absorption spectrum; contrast ratios; electroabsorption; integrated circuit chips; modulator performance; off-chip communication; single exciton peak; Absorption; Dielectric devices; Dielectric substrates; Gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical modulation; Optical reflection; Quantum well devices; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.43356

Filename

43356