Title :
Observation of multiple resonance frequencies in stripe geometry InGaAs/InGaAsP/InP quantum-well lasers
Author :
Lam, Yeeloy ; Espinosa, Enrico ; Nichols, Doyle ; Davis, Larry ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Intensity fluctuation noise in strained InGaAsP/InP multi-quantum-well lasers is analyzed for both ridge-guided and broad-area gain-guided structures. A single resonance peak is observed in the noise spectrum for the ridge-guided laser, as expected. However, the noise spectrum for the broad-area lasers shows multiple (~2-5) resonance peaks, distinctly spaced, from ~2 to ~5 GHz. Combined with near-field measurements, the experiments show that these peaks originate from lasing filaments having significantly nonuniform optical power. The authors also determined the resonance frequency of the single-mode laser from both small-signal modulation and turn-on relaxation oscillation measurements and found the results to be consistent with the measured peak noise frequency
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; laser frequency stability; semiconductor lasers; III-V semiconductors; InGaAs-InGaAsP-InP; broad-area gain-guided structures; intensity fluctuation noise; lasing filaments; measured peak noise frequency; multiple resonance frequencies; noise spectrum; nonuniform optical power; ridge-guided laser; single resonance peak; single-mode laser; small-signal modulation; strained InGaAsP/InP multi-quantum-well lasers; stripe geometry InGaAs/InGaAsP/InP quantum-well lasers; turn-on relaxation oscillation measurements; Fluctuations; Frequency measurement; Geometrical optics; Geometry; Indium phosphide; Laser noise; Noise measurement; Optical noise; Resonance; Resonant frequency;
Journal_Title :
Quantum Electronics, IEEE Journal of
