Effects of noise on transients of injection locked semiconductor lasers

Author

Surette, Marc R. ; Hjelme, Dag Roar ; Ellingsen, Reinold ; Mickelson, Alan Rolf

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

29

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

1046

Lastpage

1063

Abstract

Semiconductor laser injection locking transients are analyzed. By adiabatically eliminating the carrier dynamics, a single nonlinear stochastic differential equation is obtained for the relative phase between the master and slave lasors. The corresponding Fokker-Planck equation is used to study the steady-state locked conditions as well as phase transients of the locking process. Noise causes the steady-state relative phase between the master and the slave lasers to be a random variable with a standard deviation of approximately a few degrees for typical injection levels. The standard deviation can be reduced by using a phase detector with a limited bandwidth. The mean locking time in the presence of noise is slightly less than the deterministic prediction. Noise also causes the locked lasers to have a finite probability to momentarily unlock

Keywords

electron device noise; laser theory; semiconductor lasers; Fokker-Planck equation; carrier dynamics; injection locked semiconductor lasers; master lasers; mean locking time; noise; phase detector; phase transients; semiconductor laser injection locking transients; single nonlinear stochastic differential equation; slave lasors; steady-state locked conditions; steady-state relative phase; Differential equations; Injection-locked oscillators; Laser noise; Master-slave; Nonlinear equations; Semiconductor device noise; Semiconductor lasers; Steady-state; Stochastic resonance; Transient analysis;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.214490

Filename

214490