RF circuit implications of moderate inversion enhanced linear region in MOSFETs

Author

Toole, Bill ; Plett, Calvin ; Cloutier, Mark

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

Volume

51

Issue

2

fYear

2004

Firstpage

319

Lastpage

328

Abstract

The implications for radio frequency circuit design of the nonlinear behavior of a MOSFET transistor over all regions of operation, including moderate inversion region, are investigated. Third-order intermodulation distortion in a MOSFET amplifier is analyzed by means of Volterra Series representation. Analysis and measurements reveal a significant peaking, or "sweet-spot" of the third-order intercept point in the moderate inversion region. As a result, a significant increase in linearity with low power consumption is possible. Analysis and measurements shows the dependance of distortion on the frequency, and transistor parameters, as well as the effects of the load impedance and feedback.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; MOSFET; Volterra series; equivalent circuits; field effect MMIC; intermodulation distortion; low-power electronics; CMOS integrated circuits; MOSFET amplifier; RF circuit implications; Volterra series representation; equivalent circuit; intermodulation distortion; low power consumption; moderate inversion enhanced linear region; nonlinear behavior; nonlinear distortion; radio frequency circuit design; saturation region; Circuit synthesis; Distortion measurement; Energy consumption; Frequency measurement; Impedance measurement; Intermodulation distortion; Linearity; MOSFETs; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2003.822400

Filename

1266833