Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)

Author

Abelein, Ulrich ; Born, Mathias ; Bhuwalka, Krishna K. ; Schindler, Markus ; Schlosser, Martin ; Sulima, Torsten ; Eisele, Ignaz

Author_Institution

Inst. fur Phys., Univ. der Bundeswehr Munchen, Neubiberg

Volume

28

Issue

1

fYear

2007

Firstpage

65

Lastpage

67

Abstract

This letter presents experimental results and explanations on the reduced degradation caused by hot carriers of the vertical impact-ionization MOSFET (I-MOS) compared to the lateral device. The control and reduction of hot-carrier damage in an impact-ionization device is an important issue to make it a serious alternative for the conventional MOSFET to overcome the kT/q limit for the subthreshold slope of 60 mV/dec at room temperature. The vertical I-MOS shows an excellent subthreshold slope of about 13 mV/dec combined with a suppression of hot-carrier damage for the most part for many tens of thousands of switching cycles. We will explain the effects, which lead to this stability and validate it by measurements and simulations

Keywords

MOSFET; electron impact ionisation; hot carriers; impact ionisation; semiconductor device reliability; hot-electron damage; subthreshold slope; vertical impact-ionization MOSFET; Degradation; Helium; Hot carriers; Impact ionization; Leakage current; MOSFET circuits; Silicon; Stability; Temperature control; Voltage; Impact ionization; MOSFET; impact-ionization MOSFET (I-MOS); kT/q; silicon; subthreshold slope;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887629

Filename

4039543