Title :
A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)
Author :
Chang, Kow Ming ; Lin, Gin Min ; Chen, Cheng Guo ; Hsieh, Mon Fan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher on-state current and a lower off-state leakage current. Moreover, the on/off current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT
Keywords :
thin film transistors; four-mask-step low-temperature polysilicon thin-film transistor; self-aligned raised source-drain; thin channel; Chemical vapor deposition; Electric resistance; Electroluminescent devices; Etching; Fabrication; Glass; Leakage current; Liquid crystal displays; Substrates; Thin film transistors; on/off current ratio; Four masks; polycrystalline-silicon thin-film transistor (poly-Si TFT); self-aligned raised source/drain (SARSD); thin channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887933
