Title :
Pure effects of strain in strained-layer multiple-quantum-well lasers
Author :
Yasaka, Hiroshi ; Iga, Ryuzo ; Noguchi, Yoshio ; Yoshikuni, Yuzo
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
The pure effects of strain in strained-layer InGaAs-InGaAsP multiple-quantum-well (MQW) Fabry-Perot (FP) lasers operating in the 1.5 μm region are measured separately from the quantum effects by using lasers whose active layer wells have the same thickness but different amounts of strain. The gain peak wavelengths of transverse electric (TE) and transverse magnetic (TM) modes and the difference between TE- and TM-mode gain peak wavelengths increase when compressive strain is introduced. The differential gain coefficient and the gain saturation coefficient of the lasers are determined by measuring relative intensity noise (RIN) spectra and are found to increase with increasing compressive strain. The K factors of the lasers are determined from the relationship between the damping constant and the resonant frequency square
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; 1.5 micron; III-V semiconductors; InGaAs-InGaAsP; K factors; active layer wells; compressive strain; damping constant; differential gain coefficient; electric intensity noise spectra; gain peak wavelengths; gain saturation coefficient; quantum effects; resonant frequency square; strained layer InGaAs-InGaAsP multiple quantum well Fabry-Perot lasers; thickness; transverse electric modes; transverse magnetic modes; Capacitive sensors; Fabry-Perot; Laser modes; Laser noise; Magnetic field induced strain; Quantum well devices; Quantum well lasers; Strain measurement; Thickness measurement; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
