Pure effects of strain in strained-layer multiple-quantum-well lasers

Author

Yasaka, Hiroshi ; Iga, Ryuzo ; Noguchi, Yoshio ; Yoshikuni, Yuzo

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

29

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

1098

Lastpage

1103

Abstract

The pure effects of strain in strained-layer InGaAs-InGaAsP multiple-quantum-well (MQW) Fabry-Perot (FP) lasers operating in the 1.5 μm region are measured separately from the quantum effects by using lasers whose active layer wells have the same thickness but different amounts of strain. The gain peak wavelengths of transverse electric (TE) and transverse magnetic (TM) modes and the difference between TE- and TM-mode gain peak wavelengths increase when compressive strain is introduced. The differential gain coefficient and the gain saturation coefficient of the lasers are determined by measuring relative intensity noise (RIN) spectra and are found to increase with increasing compressive strain. The K factors of the lasers are determined from the relationship between the damping constant and the resonant frequency square

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; 1.5 micron; III-V semiconductors; InGaAs-InGaAsP; K factors; active layer wells; compressive strain; damping constant; differential gain coefficient; electric intensity noise spectra; gain peak wavelengths; gain saturation coefficient; quantum effects; resonant frequency square; strained layer InGaAs-InGaAsP multiple quantum well Fabry-Perot lasers; thickness; transverse electric modes; transverse magnetic modes; Capacitive sensors; Fabry-Perot; Laser modes; Laser noise; Magnetic field induced strain; Quantum well devices; Quantum well lasers; Strain measurement; Thickness measurement; Wavelength measurement;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.214495

Filename

214495