DocumentCode
895284
Title
Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric
Author
Chang, Man ; Jo, Minseok ; Park, Hokyung ; Hwang, Hyunsang ; Lee, Byoung Hun ; Choi, Rino
Author_Institution
Gwangju Inst. of Sci. & Technol.
Volume
28
Issue
1
fYear
2007
Firstpage
21
Lastpage
23
Abstract
The effects of fluorine (F2) annealing on the electrical and reliability characteristics of HfSiO MOSFETs were investigated. Compared with a control sample annealed in conventional forming gas (H2/N2=4%/96%), additional annealing in a fluorine ambient (F2/Ar=0.3%/99.7%) at 400 degC for 20 min improved the electrical characteristics such as lower interface trap density and higher transconductance. In addition, MOSFET samples annealed in a F2 ambient exhibited less degradation under hot-carrier stress and positive bias temperature stress. These improvements can be explained by fluorine incorporation at the high-k/Si interface, which was confirmed by an X-ray photoelectron spectroscopy analysis
Keywords
MOSFET; X-ray photoelectron spectra; annealing; fluorine; hafnium compounds; high-k dielectric thin films; silicon compounds; 20 mins; 400 C; F2; HfSiO; X-ray photoelectron spectroscopy analysis; bias temperature instability; electrical characteristics; fluorine annealing; gate dielectric; higher transconductance; hot-carrier stress; lower interface trap density; positive bias temperature stress; postmetallization annealing; reliability characteristics; Annealing; Degradation; Electric variables; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFETs; Stress; Temperature; Transconductance; Bias temperature instability; fluorine annealing; high-$k$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.887941
Filename
4039545
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