Title :
High-performance NMOS operational amplifier
Author :
Senderowicz, Daniel ; Hodges, David A. ; Gray, Paul R.
Abstract :
A high performance operational amplifier 300 mil/SUP 2/ in area has been designed and fabricated in a standard n-channel silicon-gate enhancement/depletion MOS process. Specifications achieved include open-loop gain, 1000; power consumption, 10 mW; common-mode range within 1.5 V of either supply rail; unity-gain bandwidth, 3.0 MHz with 80/spl deg/ phase margin; RMS input noise (2.5 Hz-46 kHz), 25 /spl mu/V; C-message weighted noise -5 dBrnC; and 0.1-percent settling time, 2.5 /spl mu/s.
Keywords :
Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; Bandwidth; Circuits; Energy consumption; Filters; MOS devices; Noise level; Operational amplifiers; Oxidation; Phase noise; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1052047
