DocumentCode
895332
Title
A CMOS voltage reference
Author
Tsividis, Yannis P. ; Ulmer, Richard W.
Volume
13
Issue
6
fYear
1978
Firstpage
774
Lastpage
778
Abstract
A method for developing a reference voltage in CMOS integrated circuits is described. The circuit uses MOS devices operating in the weak inversion region, as well as a bipolar device formed without process modifications. A brief description of this region of operation is given. Then, the principle of the suggested voltage reference is explained and the final implementation is presented. Higher order effects are discussed, and results from an integrated prototype given.
Keywords
Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Analog-digital conversion; CMOS analog integrated circuits; CMOS logic circuits; CMOS technology; Capacitance; Integrated circuit technology; Large scale integration; MOS devices; Prototypes; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1052049
Filename
1052049
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