DocumentCode
895369
Title
High-Performance Metal–Insulator–Metal Capacitors Using Amorphous BaSm2Ti4O12 Thin Film
Author
Jeong, Young Hun ; Lim, Jong Bong ; Nahm, Sahn ; Sun, Ho-Jung ; Lee, Hwack Joo
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul
Volume
28
Issue
1
fYear
2007
Firstpage
17
Lastpage
20
Abstract
The dielectric properties of the amorphous BaSm2Ti4O12 (BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum2 at 100 kHz and a low leakage current density of 1.790 nA/cm2 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor
Keywords
MIM devices; barium compounds; dielectric properties; samarium compounds; thin film capacitors; 1 V; 100 kHz; 300 C; 35 nm; BaSm2Ti4O12; amorphous thin film; dielectric properties; metal-insulator-metal capacitors; temperature coefficient of capacitance; voltage coefficient of capacitance; Amorphous materials; Capacitance; Dielectric materials; Dielectric thin films; Hafnium oxide; MIM capacitors; Materials science and technology; Sun; Temperature; Voltage; High-$k$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.887634
Filename
4039554
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