Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate

Author

Liu, J. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

Volume

28

Issue

1

fYear

2007

Firstpage

11

Lastpage

13

Abstract

MOSFET characteristics of NiSi fully silicidation of polysilicon gates are found to be influenced by preimplanted dopant. Dopant segregation induced by silicidation at gate/oxide interface is observed to affect threshold voltage, subthreshold swing, effective mobility, and interface characteristics. The degradation of MOSFET characteristics in B-doped NiSi metal gate is found to be related to increasing interface-state density due to silicidation-induced impurity segregation

Keywords

MOSFET; doping profiles; impurity distribution; interface states; nickel alloys; segregation; silicon alloys; FUSI NiSi gate; MOSFET; NiSi; dopant segregation; effective mobility; gate/oxide interface; impurity segregation; interface characteristics; interface-state density; polysilicon gates; silicidation; subthreshold swing; threshold voltage; Charge pumps; Degradation; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing; Semiconductor impurities; Silicidation; Silicides; Stress; Threshold voltage; Fully silicidation of polysilicon gates (FUSI); NiSi; interface-state density; mobility;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887940

Filename

4039558