Title :
Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate
Author :
Liu, J. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
MOSFET characteristics of NiSi fully silicidation of polysilicon gates are found to be influenced by preimplanted dopant. Dopant segregation induced by silicidation at gate/oxide interface is observed to affect threshold voltage, subthreshold swing, effective mobility, and interface characteristics. The degradation of MOSFET characteristics in B-doped NiSi metal gate is found to be related to increasing interface-state density due to silicidation-induced impurity segregation
Keywords :
MOSFET; doping profiles; impurity distribution; interface states; nickel alloys; segregation; silicon alloys; FUSI NiSi gate; MOSFET; NiSi; dopant segregation; effective mobility; gate/oxide interface; impurity segregation; interface characteristics; interface-state density; polysilicon gates; silicidation; subthreshold swing; threshold voltage; Charge pumps; Degradation; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing; Semiconductor impurities; Silicidation; Silicides; Stress; Threshold voltage; Fully silicidation of polysilicon gates (FUSI); NiSi; interface-state density; mobility;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.887940
