DocumentCode :
895429
Title :
Single Event Upsets in NMOS Microprocessors
Author :
Guenzer, C.S. ; Campbell, A.B. ; Shapiro, P.
Author_Institution :
Naval Research Laboratory Washington, DC 20375
Volume :
28
Issue :
6
fYear :
1981
Firstpage :
3955
Lastpage :
3958
Abstract :
Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs. The errors are inferred to occur in memory-like components of the microprocessors. Many of the errors caused the microcomputer to cease normal operations. This is the first direct experimental verification of logic upsets in microprocessors from neutrons.
Keywords :
Alpha particles; DRAM chips; Error correction; Logic devices; MOS devices; Microcomputers; Microprocessors; Neutrons; Random access memory; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1981.4335654
Filename :
4335654
Link To Document :
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