• DocumentCode
    895481
  • Title

    On the effect of mobility variation on MOS device characteristics

  • Author

    Frohman-Bentchkowsky, D.

  • Volume
    56
  • Issue
    2
  • fYear
    1968
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    An empirical approximation is used to predict the effect of surface-field dependent mobility on MOS device characteristics. Mobility dependence on both gate and drain voltages is considered. The approximation is verified by comparison with experimental device characteristics.
  • Keywords
    Acoustic waves; Attenuation; Delay lines; Electrons; Insertion loss; MOS devices; MOSFETs; Pulse amplifiers; Surface treatment; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6239
  • Filename
    1448169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895481