Time-Domain-Reflectometry for Capacitance–Voltage Measurement With Very High Leakage Current

Author

Wang, Y. ; Cheung, K.P. ; Choi, R. ; Brown, G.A. ; Lee, B.-H.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ

Volume

28

Issue

1

fYear

2007

Firstpage

51

Lastpage

53

Abstract

Accurate capacitance-voltage (C-V) measurement of MOS capacitor with very high leakage current is a problem that does not yet has a satisfactory solution. Elaborated methods can improve the accuracy but increase the measurement complexity at the same time. Here, we introduce a novel new method to measure C-V under high leakage condition based on time-domain-reflectometry. This method is simple to use and offers high accuracy

Keywords

MOS capacitors; capacitance measurement; leakage currents; time-domain reflectometry; voltage measurement; MOS capacitor; capacitance-voltage measurement; high leakage condition; time-domain-reflectometry; very high leakage current; Capacitance measurement; Current measurement; Dielectric measurements; Electrical resistance measurement; Impedance; Leakage current; MOS capacitors; MOSFET circuits; Radio frequency; Time measurement; Capacitance; capacitance–voltage ($C$–$V$); gate dielectric; leakage; time-domain-reflectometry; ultrathin;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.887628

Filename

4039570