• DocumentCode
    895558
  • Title

    Resistive Switching Mechanism in ZnxCd1 − xS Nonvolatile Memory Devices

  • Author

    Wang, Zheng ; Griffin, Peter B. ; McVittie, Jim ; Wong, Simon ; McIntyre, Paul C. ; Nishi, Yoshio

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA
  • Volume
    28
  • Issue
    1
  • fYear
    2007
  • Firstpage
    14
  • Lastpage
    16
  • Abstract
    Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path
  • Keywords
    cadmium alloys; electrical resistivity; ferroelectric storage; positive ions; random-access storage; zinc alloys; ZnCdS; cation impurity; filamentary metallic conduction path; nonvolatile memory devices; resistive switching mechanism; Electric resistance; Electrodes; Ferroelectric materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Sputtering; Switches; Switching circuits; Zinc; Chalcogenide; ZnCdS; nonvolatile memory; resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.887640
  • Filename
    4039572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895558